TOF.SIMS 5 - Field proven and efficient

With the TOF.SIMS 5 IONTOF offers a field proven and efficient TOF-SIMS tool which still outperforms most of its external rivals. The current design guarantees good performance in all fields of SIMS applications, making it an extremely attractive SIMS tool for customers in industry and academia.

Due to the modular design, the instruments can be configured with a selection of optimised ion guns, sample preparation facilities and a variety of special accessories in order to address even the most challenging analytical tasks. The computer control of all instrument functions and parameters ensures ease-of-use and a high level of automation.

The basic instrument is equipped with a reflectron TOF analyser giving high secondary ion transmission with high mass resolution, a sample chamber with a 5-axis manipulator (x, y, z, rotation and tilt) for flexible navigation, a fast entry load-lock, charge compensation for the analysis of insulators, a secondary electron detector for SEM imaging, a state-of-the-art vacuum system, and an extensive computer package for automation and data handling.

High mass resolution and sensitivity simultaneously

The TOF.SIMS 5 is equipped with a gridless reflectron type Time-of-Flight analyser. The non-linear reflectron design provides high transmission and high mass resolution in positive and negative SIMS. No apertures or slits need to be narrowed to achieve this level of mass resolution. The instrument operates with full transmission all the time.

All IONTOF SIMS instruments use a special secondary ion detector with a single channelplate-scintillator-photomultiplier combination. The lifetime of such a detector is about 1,000 times higher than for conventional dual channelplate detectors. The detector can also process high count rates without suffering from detector degradation. Hence blanking of intense matrix ion peaks is not necessary at all. In combination with the patented IONTOF EDR technology the TOF.SIMS 5 provides a dynamic range of up to seven orders of magnitude.

Bismuth Nanoprobe

The ideal workhorse for your daily analytical challenges

The Bi Nanoprobe is the standard primary ion source for all high-performance spectrometry, imaging and depth profiling applications. The source provides high analysis currents of up to 20 pA for trace detection spectrometry and high-end depth profiling.

In the fast imaging mode, it is possible to acquire the image with a slightly reduced lateral resolution within a few minutes. In the ultimate imaging mode, the beam spot size can be reduced to well below 70 nm for excellent high-resolution images. 

TOF.SIMS 5 features and accessories

  • - Sample size up to 100 mm and 300 mm
  • - Wide range of ion sources (Bin, O2, Ar, Xe, Cs, Arn, Ga)
  • - Extended dynamic range of up to seven orders of magnitude
  • - Temperature controlled heating and cooling of the sample during the analysis and sample transfer
  • - Fast sample rotation during depth profiling
  • - 20 kV post-accelaration
  • - Low energy charge compensation by electron flood gun
  • - 50 kHz repetition frequency
  • - Ergonomic design with compact footprint0
  • - Internal bakeout
  • - Modular electronics for plug-in maintenance
  • - Oil and water free low noise vacuum system High uptime and easy maintenance

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