CG6300 offers higher resolution, improved metrology repeatability and image quality.

The Advanced CD Measurement SEM CG6300 (HITACHI CD-SEM) will offer higher resolution with a fully renewed electron optical system along with improved metrology repeatability and image quality. The electron microscope column is able to select secondary electrons and backscattered electrons emitted from the material depending on the measurement target. In this way, CD-SEM: CG6300 is able to measure the bottom dimensions of deep trenches and holes in via-in-trench BEOL process as well as 3D NAND and DRAM.

  • High resolution enabling high precision measurement of 7 nm generation devices
  • Improved visibility of deep trench and contact holes dimensions as well as material contrast
  • High contrast imaging through selective performance enhancement of SE and BSE signals
  • Clear, noise-free images using multiple scanning methods including high-speed scanning
  • Wafer transport system featuring a newly designed high-speed stage
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